Description
Specification:-
1) Number of Channels: 1 Channel
2) Transistor Polarity: N-Channel
3) Drain-Source Breakdown Voltage (Vds): 75V
4) Continuous Drain Current (Id): 82A
5) Drain-Source Resistance (Rds On): 13mOhms
6) Gate-Source Voltage (Vgs): 20V
7) Gate Charge (Qg): 160 nC
8) Operating Temperature Range: -55 to 150°C
9) Power Dissipation (Pd): 230W





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