IRFB 4110

Description

Specification:-

1) Number of Channels: 1 Channel
2) Transistor Polarity: N-Channel
3) Drain-Source Breakdown Voltage (Vds): 100V
4) Continuous Drain Current (Id): 180A
5) Drain-Source Resistance (Rds On): 4.5Ohms
6) Gate-Source Voltage (Vgs): 20V
7) Gate Charge (Qg): 210 nC
8) Operating Temperature Range: -55 – 175°C
9) Power Dissipation (Pd): 370W